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    DSAIH000158573.pdf

    • HY Electronic
    • HY4N60D / HY4N60M 600V / 4.0A 600V, RDS(ON)=2.4Ω@VGS=10V, ID=2.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge
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