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    DSAZIHA100021832.pdf

    • American Microsemiconductor
    • BLF241 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)65 V(BR)GSS (V)20 I(D) Max. (A)800m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s)
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