DSAZIHA100020847.pdf
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American Microsemiconductor
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PMBT5551 Transistors
Si NPN Lo-Pwr BJT
Military/High-RelN
V(BR)CEO (V)160
V(BR)CBO (V)180
I(C) Max. (A)600m
Absolute Max. Power Diss. (W)250m
Maximum Operating Temp (øC)150õ
I(CBO) Max. (A)5
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Original
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