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    DSAZIHA100020826.pdf

    • American Microsemiconductor
    • PE1003 Transistors Si NPN LP HF BJT Military/High-RelN V(BR)CEO (V)35â V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)200nØ
    • Original

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