DSA00484441.pdf
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Toshiba
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GT25G102
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT
GT25G102
Unit: mm
STROBE FLASH APPLICATIONS
l High Input Impedance
: VCE (sat) = 8V (Max.) (IC = 150A)
l Low Satu
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Original
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