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    DSA00484441.pdf

    • Toshiba
    • GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance : VCE (sat) = 8V (Max.) (IC = 150A) l Low Satu
    • Original

    DSA00484441.pdf preview Download Datasheet

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