2N6248 datasheet by General Electric

Description Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. - Pol=PNP / Pkg=TO3 / Vceo=110 / Ic=10 / Hfe=20-100 / fT(Hz)=10M / Pwr(W)=125
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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2N6248 datasheet preview Download Datasheet