2N6609 datasheet
by General Electric
-
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. - Pol=PNP / Pkg=TO3 / Vceo=140 / Ic=16 / Hfe=5min / fT(Hz)=- / Pwr(W)=150
-
Scan
-
Unknown
-
Unknown
-
Unknown
-
Find it at Findchips.com
Price & Stock Powered by