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DSA00117380.pdf
Manufacturer
Toshiba
Partial File Text
GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm · Enhancement-Mode · High Speed: tf = 0.40 µs (max) (I
Datasheet Type
Original
ECAD Model
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GT80J101A
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