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Partial File Text ï»¿TOSHIBA -CDISCRETE/OPTO} 9097250 TOSHIBA CDISCRETE/OPTO) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MAXIMUM RATINGS (Ta=25 C) ELECTRICAL CHARACTERISTICS (Ta=25 C) DE^iaiTESD â¡â¡â¡7227 S T'
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