DSAZIHA100084791.pdf by Central Semiconductor

Partial File Text PROCESS CP773 MOSFET Transistor P-Channel Enhancement-Mode MOSFET Chip PROCESS DETAILS Die Size 39 x 27 MILS Die Thickness 7.5 MILS Gate Bonding Pad Area 6.5 x 6.5 MILS So
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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