DSA00481157.pdf by IXYS

Partial File Text DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS Test Conditions VDSS TJ = 25°C to 150°C 200 VDGR TJ = 25°C to 150°
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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201N09 DE150-201N09A nec 2401