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    DSA00481154.pdf by IXYS

    • DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS Test Conditions VDSS TJ = 25°C to 150°C 1000 VDGR TJ = 25°C to 150
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