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DSA00675740.pdf
by STMicroelectronics
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M30L0R8000T2 M30L0R8000B2 256 Mbit (×16, multiple bank, multilevel, burst) 1.8 V supply Fl
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ash memory Features Supply voltage VDD = 1.7 V to 2.0 V for program, erase and read VDDQ = 1.7 V to
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Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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