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Partial File Text SONY. GaAs N-channel Dual-Gate MES FET Description 3 S K 1 6 6 is a GaAs N -ch an nel Dual-G ate M E S FET for low noise U H F amplifiers. Low noise and high gain characteristics are accom plished
Datasheet Type Scan
RoHS No
Pb Free Unknown
Lifecycle Obsolete

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