DSAZIHA100083620.pdf by Cree

Partial File Text CGH25120F 120 W, 2300-2700 MHz, GaN HEMT for WiMAX and LTE Creeâs CGH25120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock Find it at Findchips.com

DSAZIHA100083620.pdf preview Download Datasheet