Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DSAZIHA100083587.pdf

    • Cree
    • CGHV1F006S 6 W, DC - 18 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain
    • Original
    • Price & Stock Powered by Findchips

    DSAZIHA100083587.pdf preview Download Datasheet

    Newly Added Datasheets | Privacy Policy | Digital Services Act | Contact Us | About Us

    Copyright © 2024.

    Supplyframe Tracking Pixel