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    DSAZIHA100083587.pdf

    • Cree
    • CGHV1F006S 6 W, DC - 18 GHz, 40V, GaN HEMT Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain
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    DSAZIHA100083587.pdf preview Download Datasheet

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