DSAZIHA100083585.pdf by Cree

Partial File Text CGHV27015S 15 W, DC - 6.0 GHz, 50 V, GaN HEMT Creeâs CGHV27015S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high g
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Pb Free Unknown
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