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Partial File Text ï»¿1 .....Ill 1 1 1 lllll 1 1 lllll CEDF630/CEUF630 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES â¢ 200V, 9A, Rds(on)=400itiQ @ Vgs=1 0V. â¢ Super high dense cell d
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F630 TO 252 transistor f630 UF630