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    DSAZIHA100019216.pdf by American Microsemiconductor

    • 2N6463 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)50n
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