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Partial File Text ï»¿BSS138 _March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES â¢ 50V, 0.22A, RDS(ON)=3.5Q @VGS=10V. Rds(on)=6C2 @Vgs=4.5V. â¢ High dense cell design for low Rds(on>. â¢ R
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