DSA00138200.pdf

Manufacturer Alliance Semiconductor
Partial File Text AS4LC256K16EO ® 3.3V 256K X 16 CMOS DRAM (EDO) Features · 5V I/O tolerant · 512 refresh cycles, 8 ms refresh interval · Organization: 262,144 words × 16 bits · High speed - RAS-only or C
Datasheet Type Original
ECAD Model
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