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    DSAZIHA100019026.pdf by American Microsemiconductor

    • 2N3566 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)50n
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