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    DSAZIHA100018219.pdf

    • American Microsemiconductor
    • BSM150GB160D Transistors Half Bridge IGBT Power Module Isolated Case (Y/N)Yes Circuits Per Package1 V(BR)CES (V)1.6k V(BR)GES (V)20 I(C) Max. (A)200 Absolute Max. Power Diss. (W)1.25k Minimum
    • Original

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