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    DSAZIHA100018215.pdf

    • American Microsemiconductor
    • BSM10GD100D Transistors Three-Phase Bridge IGBT Power Module Isolated Case (Y/N) Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Minimum Ope
    • Original

    DSAZIHA100018215.pdf preview Download Datasheet

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