DSAZIHA100018214.pdf by American Microsemiconductor

Partial File Text BSM100GB160D Transistors Half Bridge IGBT Power Module Isolated Case (Y/N)Yes Circuits Per Package1 V(BR)CES (V)1.6k V(BR)GES (V)20 I(C) Max. (A)135 Absolute Max. Power Diss. (W)1.0k Minimum O
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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