DSAZIHA100018019.pdf
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American Microsemiconductor
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2N508A Transistors
Ge PNP Lo-Pwr BJT
Military/High-RelN
V(BR)CEO (V)30â
V(BR)CBO (V)30
I(C) Max. (A)200m
Absolute Max. Power Diss. (W)200m
Maximum Operating Temp (øC)100õ
I(CBO) Max. (A)7.0
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Original
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