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    DSAZIHA100017614.pdf by American Microsemiconductor

    • 2N1309A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V) V(BR)CBO (V)35 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)6.0u @
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