DSAZIHA100017352.pdf
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American Microsemiconductor
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2N1009 Transistors
Ge PNP Lo-Pwr BJT
Military/High-RelN
V(BR)CEO (V)35ã
V(BR)CBO (V)35
I(C) Max. (A)300m
Absolute Max. Power Diss. (W)400m#
Maximum Operating Temp (øC)85þ
I(CBO) Max. (A)10u
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Original
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