DSAZIHA100017290.pdf by American Microsemiconductor

Partial File Text 2MBI150-120 Transistors Half Bridge IGBT Power Module Isolated Case (Y/N) Circuits Per Package2 V(BR)CES (V)1.2k V(BR)GES (V)6.0 I(C) Max. (A)150 Absolute Max. Power Diss. (W)1.2k Minimum Oper
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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