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    DSAZIHA100017270.pdf by American Microsemiconductor

    • 2G601 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V) V(BR)CBO (V)20 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)6.0u @V
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    DSAZIHA100017270.pdf preview

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