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    DSAQ00283998.pdf by Fairchild Semiconductor

    • FDMS3660S PowerTrench® Power Stage FDMS3660S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET Features Q1: N-Channel Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A Max rDS(on) = 11 m at
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    FDMS3660S MO-240
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