DSAQ00274594.pdf by California Eastern Laboratories

Partial File Text HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3515S02 X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES · Super low noise figure, high associated gain and middle output power NF = 0
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duroid 5880 HS350 ir260 ne3515 NE3515S02 NE3515S02-T1C-A NE3515S02-T1D-A RT DUROID 5880 transistor "micro-x" "marking" 3 X KU-BAND GAAS