DSAQ00274593.pdf by California Eastern Laboratories

Partial File Text HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES · Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP
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HS350 ir260 N-CHANNEL HJ-FET NE3514 NE3514S02 NE3514S02-A NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A RT DUROID 5880 transistor "micro-x" "marking" 3