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    DSAQ00274593.pdf

    • California Eastern Laboratories
    • HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES ยท Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP
    • Original

    DSAQ00274593.pdf preview Download Datasheet

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    HS350 ir260 N-CHANNEL HJ-FET NE3514 NE3514S02 NE3514S02-A NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A RT DUROID 5880 transistor "micro-x" "marking" 3
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