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    DSAZIHA1000311214.pdf

    • Toshiba
    • GT25G101(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101(SM) Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE (sat) = 8
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    DSAZIHA1000311214.pdf preview Download Datasheet

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