DSA00275953.pdf by Hitachi Semiconductor
- 4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 (Z) 1st. Edition January 1999 Features ยท Low on-resistance N Channel : RDS(on) 0.17, VGS = 10V, ID = 4A P Channel : RDS(o
- Original
- Unknown
- Unknown
- Transferred
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