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    DSA00275936.pdf by Hitachi

    • 4AK16 Silicon N-Channel Power MOS FET Array Application High speed power switching Features · Low on-resistance R DS(on) 0.18 , VGS = 10 V, I D = 5 A R DS(on) 0.25 , VGS = 4 V, I D = 5 A ·
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