DSA00275884.pdf by Hitachi

Partial File Text 2SK2802 Silicon N Channel MOS FET Low Frequency Power Switching ADE-208-537 1st. Edition Features · Low on-resistance R DS(on) = 0. 2 typ. (VGS = 4 V, I D = 100 mA) · 2.5V gate drive devices. · S
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Transferred
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