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TOSHIBA
MICROWAVE POWER GaAs FET
JS8851-AS
Power GaAs FETs (Chip Form)
Features
⢠High power
- P1dB = 24dBmatf = 15 GHz
⢠High gain
- G1dB = 8dBatf= 15 GHz
⢠Suitable for Ku-Band amp
