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    • TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: ■ HIGH POWER PldB = 24.0 dBm at f = 23 GHz ■ HIGH GAIN GldB=6.0 dB at f=23 GHz MICROWAVE POWER GaAs FET JS8893-AS SUITABLE FOR
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    JS8893-AS k-band amplifier
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