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    Scans-00151767.pdf

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    • TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES: ■ MEDIUM POWER p1dB = 21 dBm at f = 8 GHz ■ HIGH GAIN G1dB = 9 dB at f = 8 GHz MICROWAVE POWER GaAs FET JS8834-AS SUITABLE FOR
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    JS8834-AS

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