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Scans-00151758.pdf
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TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TIMI 213-10 FEATURES : â HIGH POWER â BROAD BAND INTERNALLY MATCHED P1dB = 40.5 dBm at 12.7 GHz to 13.2 GHz â H
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TIM1213-10
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