DSA00230493.pdf by Chino-Excel Technology

Partial File Text CEP35P03/CEB35P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -35A, RDS(ON) =33m @VGS = -10V. RDS(ON) =55m @VGS = -4.5V. Super high dense cell design for extremely low RDS(O
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