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    DSA00230362.pdf by Fairchild Semiconductor

    • IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features ยท 0.7A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is an ad
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    IRFD9110 TA17541
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