DSA00275379.pdf by Hitachi Semiconductor

Partial File Text 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A (Z) 2nd.Edition. June 1999 Features · Low on-resistance RDS = 1.6 typ. (VGS = 4 V , ID = 50 mA) RDS = 2.2 typ. (VGS = 2.5 V
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