DSA00275149.pdf

Manufacturer Hitachi
Partial File Text 6AM11 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features · Low on-resistance N-channel: RDS(on) 0.17 , VGS = 10 V, ID = 2.5 A P-cha
Datasheet Type Original
ECAD Model
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