DSA00275134.pdf

Manufacturer Hitachi
Partial File Text 4AK16 Silicon N-Channel Power MOS FET Array November 1996 Application High speed power switching Features · Low on-resistance RDS(on) 0.18 , VGS = 10 V, ID = 5 A RDS(on) 0.25 , VGS = 4 V, I
Datasheet Type Original

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