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    • SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 242 00.45 2.7 Chip position co > ; S i n 8_ q Gl -g ; O cvj « 14.5 12.5 ^3.0 3.6 Anode (LD 242, BPX 63, SFH
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